Toshiba IGBT Power Modules: 110Q2G43

Technical Dossier

Product Details And Specifications

Toshiba IGBT Power Module Series: Comprehensive Range and Technical Overview

The Toshiba IGBT power module series — anchored by part numbers such as the 110Q2G43 — represents a mature, field-proven line of insulated gate bipolar transistor assemblies deployed across heavy industrial sectors globally. These modules are installed in variable frequency drives (VFDs), servo amplifiers, UPS systems, induction heating equipment, and traction inverters operating in chemical plants, oil refineries, nuclear auxiliary systems, steel mills, and marine propulsion platforms. Toshiba's IGBT module portfolio spans voltage classes from 600 V to 3300 V and current ratings from 25 A to over 1200 A, making it one of the broadest discrete power semiconductor catalogs available from a single OEM. The 110Q2G43 specifically is a high-current IGBT module designed for demanding inverter and converter topologies where switching efficiency and thermal reliability are primary constraints.

The Evolution of Toshiba IGBT Module Architecture

Toshiba's IGBT module development follows four identifiable generations. The first generation (early 1990s) introduced punch-through (PT) IGBT cell structures in standard TO-247 and proprietary flat-pack housings, targeting 600 V / 1200 V classes. Switching losses were high by modern standards, and these modules required conservative derating in high-frequency applications above 5 kHz. The second generation introduced non-punch-through (NPT) and field-stop (FS) cell architectures, significantly reducing tail current and enabling operation at 10–15 kHz carrier frequencies without thermal runaway risk. Third-generation modules incorporated integrated NTC thermistors and improved AlSiC baseplates for reduced thermal resistance (Rth(j-c) values below 0.10 °C/W on high-current variants). The fourth and current generation employs trench-gate FS-IGBT cells with co-packaged SiC Schottky freewheeling diodes in select product lines, targeting switching frequencies above 20 kHz with minimal reverse recovery losses. The 110Q2G43 belongs to the mature third-generation platform. Its production status is end-of-life (EOL) or allocation-only from Toshiba's primary distribution channels, placing it firmly in the long-term maintenance and lifecycle extension category. Compatibility with legacy Toshiba VF-S9, VF-S11, VF-A7, and VF-MB1 drive platforms makes continued availability of this part critical for installed-base maintenance.

Toshiba IGBT Module Full Catalog & Functionalities (SKU List)

The following SKUs represent verified, commonly sourced Toshiba IGBT power modules across voltage and current classes. Each entry reflects a distinct electrical specification and package configuration.

110Q2G43: 1100 V / 200 A dual IGBT module, flat-pack, for main inverter bridge in industrial VFDs.
MG100Q2YS50: 1200 V / 100 A dual IGBT, TO-247 compatible flat-pack, general-purpose inverter use.
MG150Q2YS50: 1200 V / 150 A dual IGBT module, enhanced thermal baseplate, servo drive applications.
MG200Q2YS50: 1200 V / 200 A dual IGBT, high-current inverter leg, compatible with Toshiba VF-A7 series.
MG300Q2YS50: 1200 V / 300 A dual IGBT module, heavy-duty converter/inverter, steel mill auxiliary drives.
MG400Q2YS50: 1200 V / 400 A dual IGBT, large-frame VFD main switch, oil & gas compressor drives.
MG100Q2YS60: 1200 V / 100 A dual IGBT, improved switching speed variant, reduced Eoff vs. YS50 baseline.
MG150J2YS65: 1200 V / 150 A single IGBT switch module, chopper and brake circuit applications.
MG200J2YS65: 1200 V / 200 A single IGBT, dynamic braking resistor switching, crane and hoist drives.
MG50Q6ES40: 600 V / 50 A six-pack IGBT module, compact 3-phase inverter bridge, HVAC and pump drives.
MG75Q6ES40: 600 V / 75 A six-pack IGBT, integrated thermistor, elevator and escalator drive systems.
MG100Q6ES40: 600 V / 100 A six-pack IGBT module, standard 3-phase bridge, general industrial VFD.
MG150Q6ES40: 600 V / 150 A six-pack IGBT, high-current compact bridge, conveyor and mixer drives.
MG300Q1US41: 1200 V / 300 A single-switch IGBT, traction inverter and large UPS converter stages.
MG600Q1US41: 1200 V / 600 A single-switch IGBT, high-power traction and marine propulsion inverters.
MG800Q1US41: 1200 V / 800 A single-switch IGBT, utility-scale inverter and grid-tie converter applications.
MG100Q2ZS60: 1200 V / 100 A dual IGBT with integrated gate resistors, simplified drive circuit design.
MG200Q2ZS60: 1200 V / 200 A dual IGBT with integrated gate resistors, reduced EMI in sensitive environments.

Sourcing Hard-to-Find & Obsolete Toshiba IGBT Module Parts

DriveKNMS maintains a dedicated procurement channel for Toshiba IGBT modules that have reached end-of-life status or are subject to long lead times through standard distribution. The 110Q2G43 and comparable third-generation flat-pack modules are no longer in active production at Toshiba's semiconductor fabrication facilities. However, installed equipment using these parts — particularly Toshiba VF-series drives deployed in the 2000–2015 timeframe — remains operational in facilities where full drive replacement is not economically viable or operationally feasible during planned maintenance windows. DriveKNMS sources these components through verified secondary market channels, including decommissioned equipment disassembly, authorized surplus distributors, and manufacturer-adjacent inventory networks. All sourced units are subject to pre-shipment inspection. Traceability documentation is provided where available. For critical infrastructure applications, DriveKNMS can provide cross-reference analysis to identify functional equivalents from active production lines (e.g., Infineon, Mitsubishi, Fuji Electric) where direct Toshiba replacements are unavailable.

Quality Control for the Toshiba IGBT Module Range

IGBT power modules present specific failure modes that require targeted test procedures beyond standard component screening. DriveKNMS applies the following protocol to all Toshiba IGBT modules prior to shipment: (1) Visual inspection of baseplate flatness and solder joint integrity under 10× magnification; (2) Static parameter verification — V(CE)sat, V(GE)th, and I(CES) measured at defined gate bias conditions using a curve tracer; (3) Insulation resistance test between collector/emitter terminals and baseplate at 2500 V DC for a minimum of 60 seconds; (4) NTC thermistor continuity and resistance-temperature characteristic verification where integrated; (5) Dynamic switching test at rated gate drive voltage (typically +15 V / −8 V) to confirm turn-on and turn-off waveform integrity. Modules exhibiting parameter drift beyond ±10% of datasheet nominal values are quarantined and not offered for sale. This protocol is specifically calibrated for the flat-pack and press-pack housing configurations common to the Toshiba IGBT range.