ALSTOM MVAJ105RA0802A Protection Relay – MiCOM Series
ALSTOM MVAJ105RA0802A Protection Relay: Supply Continuity Strategy for a Discontinued Critical Component The ALSTOM MVAJ105RA0802A is a numerical protection relay…
Model: 430A2200V TT430N22KOF
Product Overview
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Datasheet Preview
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Commercial Path
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Technical Dossier
The INFINEON TT-Series phase-control thyristor modules are a foundational power semiconductor product line deployed across global heavy industry. Installations span petrochemical refineries, nuclear power auxiliary systems, steel mill drive systems, offshore platform power conditioning, and large-scale water treatment facilities. The TT-Series occupies a critical position in AC/DC converter stacks, soft-start circuits, and motor drive front-ends where controlled rectification at high current and voltage ratings is required. The series covers current ratings from 56A to 1800A and voltage classes from 800V to 6500V, making it one of the broadest phase-control thyristor ranges available from a single manufacturer. INFINEON (formerly Siemens Semiconductor, then Eupec) has maintained backward-compatible package geometries across multiple generations, enabling direct replacement in legacy installations without mechanical redesign.
The TT-Series traces its lineage to the Siemens SITOR thyristor family of the 1970s, which established the dual-thyristor press-pack and isolated-base module formats that remain in production today. When Siemens spun off its semiconductor division as Infineon Technologies in 1999, the TT-Series designation was standardized across the inherited Eupec product portfolio. Three distinct architectural generations are identifiable:
Generation 1 (pre-1995): Ceramic-base isolated modules with aluminum wire bonding. Characterized by higher thermal resistance values (Rth(j-c) typically >0.10 K/W at 400A class) and narrower gate trigger current tolerance bands. Many of these part numbers are now obsolete but remain in service in installed base equipment.
Generation 2 (1995–2010): Introduction of copper base plates with direct-bonded copper (DBC) substrates. Improved Rth(j-c) performance, tighter dV/dt ratings, and expanded voltage classes up to 4500V. The TT430N-series was introduced in this period, covering the 430A nominal current class.
Generation 3 (2010–present): Enhanced gate structures for improved di/dt capability, RoHS-compliant materials, and extended operating temperature ranges. Modern equivalents such as the TT430N18KOF, TT430N20KOF, and TT430N22KOF represent the current production standard. Compatibility with Generation 1 and 2 mounting hardware is maintained through standardized M6 and M8 stud torque specifications and identical footprint dimensions.
Engineers sourcing replacements for Generation 1 or 2 modules must verify gate trigger current (IGT), holding current (IH), and dV/dt ratings against the original equipment specification, as these parameters have shifted between generations even within the same current/voltage class.
The following SKUs represent verified, commonly stocked members of the INFINEON TT-Series phase-control thyristor module range. All modules are dual-thyristor (anti-parallel or common-cathode/common-anode configurations) in isolated base packages unless noted.
TT430N22KOF: 430A, 2200V, isolated base, dual thyristor, phase-control, standard recovery — primary SKU for this listing.
TT430N20KOF: 430A, 2000V, isolated base, dual thyristor, phase-control, standard recovery.
TT430N18KOF: 430A, 1800V, isolated base, dual thyristor, phase-control, standard recovery.
TT430N16KOF: 430A, 1600V, isolated base, dual thyristor, phase-control, standard recovery.
TT430N14KOF: 430A, 1400V, isolated base, dual thyristor, phase-control, standard recovery.
TT570N22KOF: 570A, 2200V, isolated base, dual thyristor, phase-control, heavy-duty converter applications.
TT570N20KOF: 570A, 2000V, isolated base, dual thyristor, phase-control.
TT570N18KOF: 570A, 1800V, isolated base, dual thyristor, phase-control.
TT320N22KOF: 320A, 2200V, isolated base, dual thyristor, phase-control, mid-range current class.
TT320N18KOF: 320A, 1800V, isolated base, dual thyristor, phase-control.
TT250N22KOF: 250A, 2200V, isolated base, dual thyristor, phase-control, compact drive applications.
TT250N18KOF: 250A, 1800V, isolated base, dual thyristor, phase-control.
TT162N22KOF: 162A, 2200V, isolated base, dual thyristor, phase-control, lower-power converter stacks.
TT162N18KOF: 162A, 1800V, isolated base, dual thyristor, phase-control.
TT56N16KOF: 56A, 1600V, isolated base, dual thyristor, phase-control, auxiliary and excitation circuits.
TT56N22KOF: 56A, 2200V, isolated base, dual thyristor, phase-control, high-voltage auxiliary applications.
TT92N16KOF: 92A, 1600V, isolated base, dual thyristor, phase-control.
TT92N22KOF: 92A, 2200V, isolated base, dual thyristor, phase-control.
DriveKNMS maintains a dedicated inventory program for TT-Series modules across all voltage and current classes, including discontinued part numbers from the Generation 1 and Generation 2 production runs. For plant operators running equipment manufactured between 1985 and 2005, original part numbers may no longer appear in INFINEON's active catalog. DriveKNMS sources these components through authorized distributor channels, manufacturer excess stock, and tested pull inventory from decommissioned equipment.
All obsolete TT-Series modules supplied by DriveKNMS are subject to the same incoming inspection protocol as current-production parts. Counterfeit thyristor modules are a documented risk in the secondary market; DriveKNMS applies date code verification, package marking authentication, and electrical parameter screening to every unit before dispatch. Long-lead-time orders for quantities exceeding 10 units can be accommodated with scheduled delivery agreements. Customers requiring a bill of materials (BOM) cross-reference service — mapping legacy part numbers to current INFINEON equivalents — can submit their lists directly to the sales team.
TT-Series thyristor modules present specific test challenges due to their dual-element construction and isolated copper base plate. DriveKNMS applies the following test sequence to all TT-Series units:
Visual and marking inspection: Package body, gate lead integrity, base plate flatness, and date code/lot code authentication against INFINEON production records where available.
Off-state blocking voltage (VDRM/VRRM): Each thyristor element is tested at rated voltage class (e.g., 2200V for TT430N22KOF) to verify forward and reverse blocking capability. Leakage current (IDRM/IRRM) is measured and compared against datasheet limits.
Gate trigger parameters (IGT, VGT): Gate trigger current and voltage are measured at standard conditions (Tj = 25°C, VAK = 12V) and compared against the specified range. Out-of-tolerance gate sensitivity is a primary indicator of degraded or counterfeit devices.
Holding current (IH) and latching current (IL): Verified to confirm proper thyristor latching behavior under low-current conditions, relevant for soft-start and partial-load operation.
Thermal resistance verification (Rth(j-c)): Spot-checked on sampled units using thermal imaging during controlled power dissipation cycles. Elevated Rth(j-c) indicates delamination of the DBC substrate or base plate bond degradation.
Isolation voltage test: Base plate to terminal isolation is tested at 2.5 kVAC (1 minute) per IEC 60747-6 requirements.
Test records are retained per batch and are available to customers upon request for critical infrastructure procurement.