Fuji Electric 2DI Series IGBT Modules 2DI75Z-120

Technical Dossier

Product Details And Specifications

Fuji Electric 2DI Series Technical Notes

The Fuji Electric 2DI Series represents one of the most widely deployed families of dual IGBT (Insulated Gate Bipolar Transistor) power modules in global heavy industry. Installed across chemical processing plants, nuclear power auxiliary systems, petroleum refinery drive systems, and large-scale steel mill inverter banks, the 2DI Series established Fuji Electric's position as a tier-one supplier of discrete power semiconductors for industrial variable-frequency drives (VFDs), UPS systems, and servo amplifier platforms. The series spans voltage classes from 600V to 1200V and current ratings from 15A to 300A, making it a reference design component in both legacy and active industrial control architectures worldwide.

The Evolution of 2DI Series Architecture

The 2DI Series was introduced by Fuji Electric in the late 1980s as part of the company's first-generation discrete IGBT module program, targeting the emerging market for compact, high-efficiency power switching in industrial inverters. Early variants such as the 2DI15Z-120 and 2DI30Z-120 used punch-through (PT) IGBT cell technology with aluminum wire bonding on direct copper bonded (DCB) substrates, packaged in the industry-standard Z-series flat-base module format.

Through the 1990s, Fuji transitioned the 2DI family to non-punch-through (NPT) and later field-stop (FS) IGBT technology, improving switching losses and short-circuit withstand time. The Z-suffix package (e.g., 2DI75Z-120) denotes the flat-base, screw-terminal housing compatible with standard heatsink mounting systems used by Fuji, Mitsubishi, and third-party drive manufacturers. The numeric suffix (-120) indicates the 1200V blocking voltage class.

2DI Series Full Catalog & Functionalities (SKU List)

The following SKUs represent verified, commonly sourced models within the Fuji Electric 2DI Series. All units are dual IGBT modules (one upper + one lower switch per package) rated for industrial inverter and chopper applications.

600V Class (suffix -060)

• 2DI15Z-060: 15A / 600V dual IGBT, compact Z-package, low-power VFD input stage
• 2DI30Z-060: 30A / 600V dual IGBT, single-phase inverter leg, servo drive output
• 2DI50Z-060: 50A / 600V dual IGBT, mid-range AC drive phase module
• 2DI75Z-060: 75A / 600V dual IGBT, three-phase inverter arm, industrial pump drives
• 2DI100Z-060: 100A / 600V dual IGBT, high-current 600V inverter phase switch
• 2DI150Z-060: 150A / 600V dual IGBT, heavy-duty conveyor and compressor drives

1200V Class (suffix -120)

• 2DI15Z-120: 15A / 1200V dual IGBT, low-current 1200V chopper or inverter leg
• 2DI30Z-120: 30A / 1200V dual IGBT, medium-voltage auxiliary drive phase module
• 2DI50Z-120: 50A / 1200V dual IGBT, standard inverter arm for 690V AC systems
• 2DI75Z-120: 75A / 1200V dual IGBT, primary phase switch for 690V industrial VFDs — this listing
• 2DI100Z-120: 100A / 1200V dual IGBT, high-power 690V drive output stage
• 2DI150Z-120: 150A / 1200V dual IGBT, large-frame inverter phase module, refinery drives
• 2DI200Z-120: 200A / 1200V dual IGBT, heavy industrial crane and hoist drive systems
• 2DI300Z-120: 300A / 1200V dual IGBT, maximum-current 2DI variant, steel mill main drives
• 2DI75D-120: 75A / 1200V dual IGBT, D-package flat-base variant, alternative mounting footprint
• 2DI100D-120: 100A / 1200V dual IGBT, D-package, compatible with select Fuji FRENIC drive frames

Sourcing Hard-to-Find & Obsolete 2DI Series Parts

For plant maintenance teams operating Fuji FRENIC, FALDIC, or third-party drives built on 2DI modules, DriveKNMS provides: same-series cross-reference matching, functional equivalent substitution analysis (e.g., 2DI75Z-120 → 2MBI75U4B-120 migration assessment), and multi-unit blanket order fulfillment for scheduled maintenance shutdowns.

Quality Control for the 2DI Series Range

Each 2DI Series module processed by DriveKNMS undergoes a structured inspection and functional verification protocol designed for the specific electrical characteristics of dual IGBT flat-base packages:

• Visual inspection: DCB substrate crack detection, wire bond integrity check, terminal corrosion assessment, and case delamination screening under 10× magnification.
• Static parameter test: Gate threshold voltage (VGE(th)), collector-emitter leakage (ICES), and gate-emitter leakage (IGES) measured per Fuji Electric datasheet limits.
• Dynamic switching test: Turn-on and turn-off waveform capture at rated gate drive conditions (VGE = +15V / −15V, RG = 10Ω) to verify switching energy within specification.
• Thermal resistance check: Junction-to-case thermal resistance (Rth(j-c)) verified against datasheet maximum to confirm heatsink interface integrity.
• Hi-pot isolation test: 2500V AC applied between power terminals and baseplate for 1 minute to confirm creepage and clearance integrity.