Toshiba MG Series IGBT Power Modules MG100Q2YS50

Technical Dossier

Product Details And Specifications

Toshiba MG Series IGBT Power Modules Technical Notes

The Toshiba MG Series represents one of the most widely deployed families of IGBT (Insulated Gate Bipolar Transistor) power modules in global heavy industry. Installed across chemical processing plants, nuclear power auxiliary systems, petroleum refinery drive systems, steel mill rolling lines, and large-scale UPS infrastructure, the MG Series established Toshiba as a tier-one supplier of discrete power semiconductor modules throughout the 1990s and 2000s. Voltage ratings span 600 V to 1200 V; current ratings range from 25 A to 600 A, covering a broad spectrum of inverter, converter, and chopper topologies. The series is characterized by its isolated copper base plate, Al₂O₃ or AlN ceramic substrate, and industry-standard footprint dimensions that enabled drop-in compatibility across multiple OEM drive platforms including Toshiba VF-S, VF-nC3, and third-party inverter cabinets from Fuji, Mitsubishi, and ABB.

The Evolution of MG Series Architecture

The MG Series was introduced in the late 1980s as Toshiba's response to the growing demand for modular, field-replaceable power switching devices in variable-frequency drives and industrial inverters. Early variants used Al₂O₃ ceramic substrates with standard solder-bonded die attach, offering switching frequencies up to 5 kHz. By the mid-1990s, Toshiba transitioned to AlN (aluminum nitride) substrates in higher-current variants, improving thermal conductivity from approximately 20 W/m·K to 170 W/m·K and enabling higher switching frequencies up to 20 kHz in select models.

The internal topology evolved from single-switch (chopper) configurations in early models to dual (half-bridge), six-pack (three-phase bridge), and chopper+brake configurations as drive architectures matured. Gate drive requirements shifted from bipolar-compatible 15 V single-supply to ±15 V split-supply designs, a compatibility consideration critical when retrofitting older drive control boards. The MG Series entered its mature/end-of-life phase approximately 2010–2015, with Toshiba transitioning its active product roadmap to the MG-G and GT series using 4th-generation IGBT chip technology. As a result, the majority of MG Series part numbers are now classified as discontinued, making verified aftermarket and surplus inventory the primary sourcing channel for maintenance and repair operations (MRO).

MG Series Full Catalog & Functionalities (SKU List)

The following SKUs represent verified, commonly stocked members of the Toshiba MG Series. Each entry reflects a real, documented part number. Models are organized by internal topology and current rating.

Single-Switch / Chopper Modules

• MG25Q2YS40: 25 A / 600 V single IGBT chopper module, TO-247 compatible footprint
• MG50Q2YS40: 50 A / 600 V single IGBT, standard isolated base plate, 5 kHz rated
• MG75Q2YS40: 75 A / 600 V single IGBT, copper base, Al₂O₃ substrate
• MG100Q2YS40: 100 A / 600 V single IGBT chopper, direct predecessor to MG100Q2YS50
• MG100Q2YS50: 100 A / 600 V single IGBT module, AlN substrate, 20 kHz capable, isolated copper base plate
• MG150Q2YS40: 150 A / 600 V single IGBT, high-current chopper/inverter leg
• MG200Q2YS40: 200 A / 600 V single IGBT, heavy-duty inverter and traction applications

Dual (Half-Bridge) Modules

• MG25Q6ES40: 25 A / 600 V dual IGBT half-bridge, compact drive applications
• MG50Q6ES40: 50 A / 600 V dual IGBT half-bridge, standard VFD phase leg
• MG75Q6ES40: 75 A / 600 V dual IGBT half-bridge, mid-range inverter phase leg
• MG100Q6ES40: 100 A / 600 V dual IGBT half-bridge, common in 30–55 kW drives
• MG150Q6ES40: 150 A / 600 V dual IGBT half-bridge, 55–90 kW drive phase leg
• MG200Q6ES40: 200 A / 600 V dual IGBT half-bridge, 90–132 kW inverter applications

1200 V Series (High-Voltage Applications)

• MG100Q2YS90: 100 A / 1200 V single IGBT, medium-voltage drive and traction inverter
• MG150Q2YS90: 150 A / 1200 V single IGBT, utility-scale inverter and railway auxiliary
• MG200Q2YS90: 200 A / 1200 V single IGBT, high-power industrial converter stage

Quality Control for the MG Series Range

Power modules in the MG Series present specific test challenges due to their isolated base plate construction, internal bond wire aging, and solder fatigue failure modes common in thermally cycled industrial environments. DriveKNMS applies the following test protocol to all MG Series units prior to dispatch:

• Static parameter verification: VCE(sat), VGE(th), ICES, and IGES measured at defined test conditions per Toshiba datasheet limits
• Isolation voltage test: 2500 V AC applied between base plate and terminals for 1 minute per IEC 60747-9
• Dynamic switching test: Gate drive applied at rated VGE; turn-on and turn-off waveforms captured and compared against reference signatures
• Thermal resistance check: Rth(j-c) verified by transient thermal impedance measurement to detect delaminated substrates or degraded solder layers
• Visual and X-ray inspection: Bond wire integrity and die attach quality assessed; X-ray used for non-destructive internal inspection on high-value units