Infineon FZ450R12KE3 IGBT Power Module – Obsolete PrimePACK Spare Part
Infineon FZ450R12KE3 IGBT Power Module – Obsolete PrimePACK Spare Part When the FZ450R12KE3 fails in a production environment, the consequences…
Model: TT210N14KOF
Product Overview
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Datasheet Preview
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Commercial Path
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Technical Dossier
The Infineon TT-N Series thyristor modules occupy a critical position in global heavy industry infrastructure. Deployed extensively in chemical processing plants, nuclear power stations, oil refineries, steel mills, and marine drive systems, these phase-controllable power semiconductor modules serve as the switching backbone of medium-voltage DC drive systems, soft-starters, and AC power controllers. The TT-N Series covers a current range from 56 A to 570 A (ITAV) and voltage classes from 800 V to 2200 V (VRRM), making it one of the broadest thyristor module families available from a single manufacturer. Infineon (formerly Siemens Semiconductor and later Eupec) has maintained backward-compatible package footprints across generations, enabling direct substitution in legacy drive cabinets without mechanical redesign. The installed base of TT-N modules in continuous industrial operation spans several decades, and demand for both new and refurbished units remains active in the MRO (Maintenance, Repair & Overhaul) market.
The TT-N Series traces its lineage to the early Siemens/Eupec discrete thyristor module platforms of the 1980s. The original designs used aluminum-bonded silicon pellets in a dual-thyristor (anti-parallel or series) configuration housed in a standard IHV (International Housing for Power Semiconductors) base. Key architectural milestones include:
Generation 1 (1980s–early 1990s): Ceramic substrate with aluminum wire bonding. Thermal resistance Rth(j-c) values were relatively high by modern standards. Packages were mechanically identical to current production, ensuring long-term retrofit compatibility.
Generation 2 (mid-1990s–2000s): Transition to Eupec branding post-Siemens spin-off. Introduction of improved silicon technology reducing forward voltage drop (VT) and improving dI/dt and dV/dt ratings. The TT210N14KOF belongs to this mature generation — rated 210 A ITAV, 1400 V VRRM, in the standard K-package (IHV-B).
Generation 3 (2010s–present): Infineon absorbed Eupec and continued the TT-N line with enhanced passivation and improved thermal cycling endurance. Modern equivalents such as the TT162N and TT250N sub-families extend the range. For applications requiring higher switching frequency or lower conduction losses, Infineon's IGBT-based SKiiP and PrimePACK platforms are the recommended migration path, though they require drive circuit redesign.
Compatibility note: All TT-N modules share the standard 62 mm module footprint with M5 power terminals and M4 signal/gate terminals, ensuring interchangeability across voltage and current classes within the same package size.
The following SKUs represent verified, commonly stocked members of the Infineon TT-N thyristor module family. Each unit contains two thyristors in anti-parallel (AC control) or series (DC control) configuration unless otherwise noted.
TT56N12KOF: 56 A / 1200 V dual thyristor module, standard K-package, AC power control applications.
TT56N14KOF: 56 A / 1400 V dual thyristor module, elevated voltage class for medium-voltage drives.
TT92N12KOF: 92 A / 1200 V dual thyristor, compact drive and soft-starter use.
TT92N14KOF: 92 A / 1400 V dual thyristor, crane and hoist drive systems.
TT130N12KOF: 130 A / 1200 V dual thyristor, DC motor field excitation controllers.
TT130N14KOF: 130 A / 1400 V dual thyristor, industrial rectifier bridges.
TT162N12KOF: 162 A / 1200 V dual thyristor, three-phase bridge rectifier assemblies.
TT162N14KOF: 162 A / 1400 V dual thyristor, steel rolling mill auxiliary drives.
TT210N12KOF: 210 A / 1200 V dual thyristor, standard industrial drive replacement.
TT210N14KOF: 210 A / 1400 V dual thyristor module — primary SKU of this listing; phase-control thyristor for DC drives, soft-starters, and AC regulators in heavy industry.
TT210N16KOF: 210 A / 1600 V dual thyristor, high-voltage DC link applications.
TT250N12KOF: 250 A / 1200 V dual thyristor, large motor soft-start systems.
TT250N14KOF: 250 A / 1400 V dual thyristor, offshore platform power distribution.
TT320N12KOF: 320 A / 1200 V dual thyristor, high-current rectifier stacks.
TT320N14KOF: 320 A / 1400 V dual thyristor, chemical plant electrolysis power supplies.
TT425N12KOF: 425 A / 1200 V dual thyristor, large-scale DC drive systems.
TT425N14KOF: 425 A / 1400 V dual thyristor, nuclear auxiliary power control.
TT570N12KOF: 570 A / 1200 V dual thyristor, maximum current class in standard K-package.
The TT-N Series has entered the mature-to-declining phase of its product lifecycle. Infineon has progressively reduced active production of lower-current variants in favor of next-generation platforms. For plant operators running legacy DCS and drive systems with 10–30 year design lives, this creates a critical MRO sourcing challenge: OEM channels no longer stock the full range, and counterfeit modules have proliferated in the gray market.
DriveKNMS maintains a dedicated inventory program for TT-N Series lifecycle extension. Our sourcing protocol covers: authenticated new-old-stock (NOS) units from verified distributor closeouts; professionally refurbished modules with full electrical re-testing; and cross-reference matching to identify approved substitute part numbers where direct replacements are unavailable. All units are stored in ESD-controlled, climate-regulated warehousing. We maintain traceability records for each unit, including date code, lot number, and test data, to support plant maintenance documentation requirements.
Thyristor modules present specific test challenges compared to standard diode or IGBT modules due to their gate-controlled turn-on behavior and the need to verify both forward and reverse blocking capability. DriveKNMS applies the following test sequence to all TT-N Series units processed through our facility:
Visual & Mechanical Inspection: Examination of housing integrity, terminal condition, and date code authenticity against known-good reference samples. Counterfeit detection includes resin texture analysis and terminal plating verification.
Static Electrical Tests: Forward voltage drop (VT) measurement at rated ITAV; reverse leakage current (IRRM) at VRRM; gate trigger current (IGT) and gate trigger voltage (VGT) verification per IEC 60747-6.
Dynamic / Functional Tests: Gate pulse response testing; dV/dt withstand verification; thermal resistance (Rth j-c) spot-check via thermal imaging under controlled power dissipation.
High-Potential (Hi-Pot) Test: Isolation voltage test between power terminals and baseplate per module datasheet specification.
Test reports are available upon request for critical plant maintenance applications. Modules that fail any parameter are quarantined and not returned to inventory.