Fuji Electric 2MBI Series IGBT Modules

Technical Dossier

Product Details And Specifications

Fuji Electric 2MBI Series: Comprehensive Module Range and Technical Overview

The Fuji Electric 2MBI Series represents one of the most widely deployed families of dual IGBT (Insulated Gate Bipolar Transistor) modules in global heavy industry. Installed across chemical processing plants, nuclear power auxiliary systems, petroleum refining facilities, steel rolling mills, and large-scale variable frequency drive (VFD) platforms, the 2MBI Series has established a dominant position in medium-voltage power conversion applications. Its standardized 2-in-1 dual switch topology — combining two IGBT chips and two freewheeling diodes in a single isolated base package — makes it the preferred building block for three-phase inverter bridges, active front-end rectifiers, and DC chopper circuits operating in the 600 V and 1200 V class range. The series covers collector current ratings from 50 A to 600 A, addressing both compact servo drive designs and high-power industrial inverter stacks. Fuji Electric's proprietary 5th and 6th generation IGBT chip technology, embedded within the 2MBI package, delivers low saturation voltage (VCE(sat)) characteristics that directly reduce conduction losses in continuous-duty industrial cycles.

The Evolution of 2MBI Architecture

The 2MBI Series was introduced by Fuji Electric in the early 1990s as a successor to bipolar Darlington power modules, targeting the emerging market for IGBT-based motor drives. The first-generation 2MBI modules used punch-through (PT) IGBT technology with relatively high switching losses, limiting switching frequencies to 2–4 kHz in most industrial applications. The package footprint followed the industry-standard isolated base (IB) format with M5 or M6 screw terminals, ensuring backward mechanical compatibility across generations.

By the mid-1990s, Fuji introduced the N-series suffix variants (e.g., 2MBI300N-060), incorporating non-punch-through (NPT) IGBT chips. NPT technology improved short-circuit withstand time and ruggedness under fault conditions — a critical requirement for industrial drives operating in uncontrolled environments. The 060 voltage suffix denotes a 600 V blocking voltage class (VCES = 600 V), while 120 suffix variants address 1200 V applications.

The transition from 4th to 5th generation IGBT chips within the 2MBI package brought VCE(sat) reductions of approximately 15–20%, alongside improved thermal impedance (Rth(j-c)) values. Modern replacement equivalents such as the 2MBI400U4B-120 and 2MBI600VN-120 series represent the current production state, offering enhanced gate charge characteristics compatible with modern gate driver ICs. Legacy 2MBI variants (N-suffix, P-suffix) are now in the end-of-life or obsolete phase, making aftermarket sourcing and lifecycle extension support essential for installed base maintenance.

2MBI Full Catalog & Functionalities (SKU List)

The following SKUs represent verified, commonly referenced models within the Fuji Electric 2MBI Series. Models are classified by function and voltage class:

600 V Class — Dual IGBT Modules (VCES = 600 V)

2MBI50N-060: 50 A / 600 V dual IGBT, compact VFD inverter bridge cell
2MBI75N-060: 75 A / 600 V dual IGBT, servo amplifier output stage module
2MBI100N-060: 100 A / 600 V dual IGBT, standard industrial inverter phase leg
2MBI150N-060: 150 A / 600 V dual IGBT, medium-power AC drive output switch
2MBI200N-060: 200 A / 600 V dual IGBT, high-current 3-phase inverter leg module
2MBI300N-060: 300 A / 600 V dual IGBT, heavy-duty VFD and UPS inverter stage
2MBI400N-060: 400 A / 600 V dual IGBT, large industrial drive power stack module
2MBI600N-060: 600 A / 600 V dual IGBT, high-power traction and crane drive module

1200 V Class — Dual IGBT Modules (VCES = 1200 V)

2MBI50N-120: 50 A / 1200 V dual IGBT, medium-voltage servo and spindle drive
2MBI75N-120: 75 A / 1200 V dual IGBT, elevator and hoist drive inverter cell
2MBI100N-120: 100 A / 1200 V dual IGBT, standard 1200 V class inverter phase arm
2MBI150N-120: 150 A / 1200 V dual IGBT, wind turbine converter sub-module
2MBI200N-120: 200 A / 1200 V dual IGBT, industrial press and extruder drive module
2MBI300N-120: 300 A / 1200 V dual IGBT, high-power pump and compressor VFD stage
2MBI400U4B-120: 400 A / 1200 V 5th-gen IGBT, current-production upgrade for legacy 400 A slots
2MBI600VN-120: 600 A / 1200 V 6th-gen IGBT, modern high-current replacement for obsolete 600 A variants

Sourcing Hard-to-Find & Obsolete 2MBI Series Parts

The majority of N-suffix 2MBI modules (2MBI300N-060, 2MBI200N-060, 2MBI150N-120, etc.) have been discontinued by Fuji Electric and are no longer available through standard distribution channels. However, the installed base of equipment using these modules — including Fuji FRENIC, Mitsubishi FR-series, and OEM-branded drives built between 1995 and 2015 — remains substantial in active service across petrochemical, pulp and paper, and water treatment facilities.

DriveKNMS maintains a dedicated inventory program for end-of-life 2MBI Series modules, sourced through controlled channels including decommissioned equipment recovery, authorized surplus stock, and verified third-party supply networks. Each unit undergoes individual traceability documentation prior to dispatch. For facilities operating under planned maintenance schedules, DriveKNMS offers consignment stock arrangements and multi-unit blanket order agreements to ensure uninterrupted spare parts availability for the 2MBI platform through extended service horizons.

Quality Control for the 2MBI Series Range

The 2MBI package integrates two IGBT chips, two freewheeling diodes, and an isolated copper base plate within a single resin-encapsulated housing. Verification of module integrity requires testing beyond simple continuity checks. DriveKNMS applies the following test protocol to all 2MBI Series units processed through its facility:

Static parameter verification covers VCE(sat) at rated IC, gate threshold voltage (VGE(th)), and leakage current (ICES) at rated VCES — all measured against Fuji Electric datasheet limits. Dynamic switching characterization is performed using a double-pulse test circuit to measure turn-on energy (Eon), turn-off energy (Eoff), and reverse recovery energy (Err) of the freewheeling diode. Isolation voltage testing applies 2500 V AC for one minute between the power terminals and the base plate to verify dielectric integrity of the DBC (Direct Bonded Copper) substrate. Thermal resistance spot-check via transient thermal impedance measurement confirms the junction-to-case thermal path has not been degraded by prior thermal cycling or solder fatigue. Visual and X-ray inspection screens for bond wire lift-off, solder void formation, and encapsulant delamination — failure modes specific to modules with prior high-cycle service history.